© Semiconductor Components Industries, LLC, 2006

March, 2006 − Rev. 3

1

Publication Order Number:

BAS20HT1/D

BAS20HT1

Preferred Device

High Voltage

Switching Diode

Features

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Continuous Reverse Voltage

200

Vdc

Repetitive Peak Reverse Voltage

200

Vdc

Peak Forward Current

200

mAdc

Peak Forward Surge Current

625

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board*

Derate above 25

°C

200

1.57

mW

mW/

°C

Thermal Resistance Junction−to−Ambient

635

°C/W

Junction and Storage Temperature Range

−55 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*FR−5 Minimum Pad

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Voltage Leakage Current

−

−

1.0

100

mAdc

Reverse Breakdown Voltage

250

−

Vdc

Forward Voltage

−

−

1000

1250

mV

Diode Capacitance

−

5.0

pF

Reverse Recovery Time

−

50

ns

http://onsemi.com

HIGH VOLTAGE

SWITCHING DIODE

Device

Package

ORDERING INFORMATION

BAS20HT1

SOD−323

3000/Tape & Reel

SOD−323

CASE 477

STYLE 1

Preferred devices are recommended choices for future use

and best overall value.

1

CATHODE

2

ANODE

MARKING DIAGRAM

JR = Specific Device Code

M

= Date Code*

G

= Pb−Free Package

1

2

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

JR M

G

G

BAS20HT1G

SOD−323

(Pb−Free)

3000/Tape & Reel

(Note: Microdot may be in either location)

*Date Code orientation may vary depending upon

manufacturing location.