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CS5212GDR14G Datasheet(PDF) 3 Page - ON Semiconductor |
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CS5212GDR14G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 13 page CS5212 http://onsemi.com 3 MAXIMUM RATINGS Pin Name Pin Symbol VMAX VMIN ISOURCE ISINK IC Power Input VCC 6.0 V −0.3 V N/A 50 mA DC Power input for the low side driver VC 16 V −0.3 V N/A 1.5 A Peak, 200 mA DC Power Supply input for the high side driver BST 20 V −0.3 V N/A 1.5 A Peak, 200 mA DC Compensation Capacitor COMP 6.0 V −0.3 V 1.0 mA 1.0 mA Voltage Feedback Input VFB 6.0 V −0.3 V 1.0 mA 1.0 mA Oscillator Resistor ROSC 6.0 V −0.3 V 1.0 mA 1.0 mA Fast Feedback Input VFFB 6.0 V −0.3 V 1.0 mA 1.0 mA High−Side FET Driver GATE(H) 20 V −0.3 V −2.0 V for 50 ns 1.5 A Peak, 200 mA DC 1.5 A Peak, 200 mA DC Low−Side FET Driver GATE(L) 16 V −0.3 V −2.0 V for 50 ns 1.5 A Peak, 200 mA DC 1.5 A Peak, 200 mA DC Positive Current Sense IS+ 6.0 V −0.3 V 1.0 mA 1.0 mA Negative Current Sense IS− 6.0 V −0.3 V 1.0 mA 1.0 mA Power Ground PGND 0.3 V −0.3 V 1.5 A Peak, 200 mA DC N/A Logic Ground LGND 0 V 0 V 100 mA N/A Sense Ground SGND 0.3 V −0.3 V 1.0 mA 1.0 mA ELECTRICAL CHARACTERISTICS (−40°C < TA < 85°C (CS5212E); 0°C < TA < 70°C (CS5212G); −40°C < TJ < 125°C; 3.1 V < VCC < 3.5 V; 3.1 V < VC < 7.0 V; 4.5 V < BST < 20 V; CGATE(H) = CGATE(L) = 3.3 nF; ROSC = 51 k; CCOMP = 0.1 mF, unless otherwise specified.) Characteristic Test Conditions Min Typ Max Unit Error Amplifier VFB Bias Current VFB = 0 V − 0.1 1.0 mA COMP Source Current VFB = 0.8 V 15 30 60 mA COMP SINK Current VFB = 1.2 V 15 30 60 mA Open Loop Gain − − 98 − dB Unity Gain Bandwidth C = 0.1 mF − 50 − kHz PSRR @ 1.0 kHz − − 70 − dB Output Transconductance − − 32 − mmho Output Impedance − − 2.5 − MW Reference Voltage −0.1 V < SGND < 0.1 V, COMP = VFB, Measure VFB to SGND 0.977 0.992 1.007 V COMP Max Voltage VFB = 0.8 V 2.5 3.0 − V COMP Min Voltage VFB = 1.2 V − 0.1 0.2 V GATE(H) and GATE(L) High Voltage (AC) GATE(L) GATE(H) 0.5 nF < CGATE(H) = CGATE(L) < 10 nF (Note 2) VC − 0.5 BST − 0.5 − − − − V V Low Voltage (AC) GATE(L) or GATE(H) 0.5 nF < CGATE(H); CGATE(L) < 10 nF (Note 2) − − 0.5 V Rise Time VC = BST = 7.0 V, Measure: 0.7 V < GATE(L) < 6.3 V, 0.7 V < GATE(H) < 6.3 V − 40 80 ns Fall Time VC = BST = 7.0 V, Measure: 0.7 V < GATE(L) < 6.3 V, 0.7 V < GATE(H) < 6.3 V − 40 80 ns 2. GBD. |
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