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CS5156GN16 Datasheet(PDF) 11 Page - ON Semiconductor |
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CS5156GN16 Datasheet(HTML) 11 Page - ON Semiconductor |
11 / 17 page CS5156 http://onsemi.com 11 (see Figure 14). This circuit operates by pulling the Soft Start pin high, and the VFFB pin low, emulating a short circuit condition. Figure 14. Implementing Shutdown with the CS5156 Shutdown Input 5.0 V MMUN2111T1 (SOT−23) 5 8 V FFB SS IN4148 CS5156 External Power Good Circuit An optional Power Good signal can be generated through the use of four additional external components (see Figure 15). The threshold voltage of the Power Good signal can be adjusted per the following equation: VPower Good + (R1 ) R2) 0.65 V R2 This circuit provides an open collector output that drives the Power Good output to ground for regulator voltages less than VPower Good. Figure 15. Implementing Power Good with the CS5156 5.0 V Power Good 10 k VOUT PN3904 6.2 k R1 R2 PN3904 10 k R3 CS5156 Figure 16. CS5156 Demonstration Board During Power Up. Power Good Signal is Activated when Output Voltage Reaches 1.70 V. M 2.50 ms Trace 4− 5.0 V Input (2.0 V/div.) Trace 3 − 12 V Input (VCC1) and (VCC2) (10 V/div.) Trace 1− Regulator Output Voltage (1.0 V/div.) Trace 2− Power Good Signal (2.0 V/div.) Selecting External Components The CS5156 can be used with a wide range of external power components to optimize the cost and performance of a particular design. The following information can be used as general guidelines to assist in their selection. NFET Power Transistors Both logic level and standard MOSFETs can be used. The reference designs derive gate drive from the 12 V supply which is generally available in most computer systems and use logic level MOSFETs. A charge pump may be easily implemented to support 5.0 V only systems. Multiple MOSFETs may be paralleled to reduce losses and improve efficiency and thermal management. Voltage applied to the MOSFET gates depends on the application circuit used. The gate driver output is specified to drive to within 1.5 V of ground when in the low state and to within 2.0 V of its bias supply when in the high state. In practice, the MOSFET gates will be driven rail to rail due to overshoot caused by the capacitive load they present to the controller IC. For the typical application where VCC1 = VCC2 = 12 V and 5.0 V is used as the source for the regulator output current, the following gate drive is provided; VGATE(H) + 12 V * 5.0 V + 7.0 V (see Figure 17.) |
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