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2N6504 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. 2N6504
Description  Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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2N6504 Datasheet(HTML) 2 Page - ON Semiconductor

   
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2N6504 Series
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2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
*Peak Repetitive Off−State Voltage (Note 1)
(Gate Open, Sine Wave 50 to 60 Hz, TJ = 25 to 125°C)
2N6504
2N6505
2N6507
2N6508
2N6509
VDRM,
VRRM
50
100
400
600
800
V
On-State Current RMS (180
° Conduction Angles; TC = 85°C)
IT(RMS)
25
A
Average On-State Current (180
° Conduction Angles; TC = 85°C)
IT(AV)
16
A
Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 100°C)
ITSM
250
A
Forward Peak Gate Power (Pulse Width
≤ 1.0 ms, TC = 85°C)
PGM
20
W
Forward Average Gate Power (t = 8.3 ms, TC = 85°C)
PG(AV)
0.5
W
Forward Peak Gate Current (Pulse Width
≤ 1.0 ms, TC = 85°C)
IGM
2.0
A
Operating Junction Temperature Range
TJ
−40 to +125
°C
Storage Temperature Range
Tstg
−40 to +150
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
*Thermal Resistance, Junction−to−Case
RqJC
1.5
°C/W
*Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 10 Seconds
TL
260
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
* Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
TJ = 25°C
TJ = 125°C
IDRM,
IRRM
10
2.0
mA
mA
ON CHARACTERISTICS
* Forward On−State Voltage (Note 2) (ITM = 50 A)
VTM
1.8
V
* Gate Trigger Current (Continuous dc)
TC = 25°C
(VAK = 12 Vdc, RL = 100 W)TC = −40°C
IGT
9.0
30
75
mA
* Gate Trigger Voltage (Continuous dc) (VAK = 12 Vdc, RL = 100 W, TC = −40°C)
VGT
1.0
1.5
V
Gate Non-Trigger Voltage (VAK = 12 Vdc, RL = 100 W, TJ = 125°C)
VGD
0.2
V
* Holding Current
TC = 25°C
(VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open) TC = −40°C
IH
18
40
80
mA
* Turn-On Time (ITM = 25 A, IGT = 50 mAdc)
tgt
1.5
2.0
ms
Turn-Off Time (VDRM = rated voltage)
(ITM = 25 A, IR = 25 A)
(ITM = 25 A, IR = 25 A, TJ = 125°C)
tq
15
35
ms
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage (Gate Open, Rated VDRM, Exponential Waveform)
dv/dt
50
V/
ms
*Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2%.


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