2N6387_06 datasheet(3/6 Pages) ONSEMI

Part #	2N6387

Description	Plastic Medium?뭁ower Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 ??80 VOLTS

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2N6387, 2N6388

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3

Figure 2. Switching Times Test Circuit

7.0

0.1

Figure 3. Switching Times

IC, COLLECTOR CURRENT (AMPS)

5.0

0.7

0.3

0.2

10

VCC = 30 V

IC/IB = 250

IB1 = IB2

TJ = 25°C

tf

0.07

1.0

5.0

ts

tr

0.1

1.0

3.0

0.5

2.0

0

VCC

+ 30 V

SCOPE

TUT

− 4.0 V

tr, tf v 10 ns

DUTY CYCLE = 1.0%

RC

D1 MUST BE FAST RECOVERY TYPES, e.g.,

1N5825 USED ABOVE IB [ 100 mA

MSD6100 USED BELOW IB [ 100 mA

25

ms

D1

51

RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

V1

APPROX

+ 12 V

V2

APPROX

− 8 V

[ 8.0 k [ 120

FOR td AND tr, D1 IS DISCONNECTED

AND V2 = 0

RB

td

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

200

1.0 k

500

ZqJC (t) = r(t) RqJC

RqJC = 1.92°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) ZqJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01

SINGLE PULSE

0.1

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