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2N6394 Datasheet(PDF) 1 Page - ON Semiconductor

Part No. 2N6394
Description  Silicon Controlled Rectifiers SCRs 12 AMPERES RMS 50 thru 800 VOLTS
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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2N6394 Datasheet(HTML) 1 Page - ON Semiconductor

   
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© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 6
1
Publication Order Number:
2N6394/D
2N6394 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies.
Features
Glass Passivated Junctions with Center Gate Geometry for Greater
Parameter Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Blocking Voltage to 800 V
Pb−Free Packages are Available*
MAXIMUM RATINGS † (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
2N6394
2N6395
2N6397
2N6399
VDRM,
VRRM
50
100
400
800
V
On-State RMS Current
(180
° Conduction Angles; TC = 90°C)
IT(RMS)
12
A
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, TJ = 90°C)
ITSM
100
A
Circuit Fusing (t = 8.3 ms)
I2t
40
A2s
Forward Peak Gate Power
(Pulse Width
≤ 1.0 ms, TC = 90°C)
PGM
20
W
Forward Average Gate Power
(t = 8.3 ms, TC = 90°C)
PG(AV)
0.5
W
Forward Peak Gate Current
(Pulse Width
≤ 1.0 ms, TC = 90°C)
IGM
2.0
A
Operating Junction Temperature Range
TJ
−40 to +125
°C
Storage Temperature Range
Tstg
−40 to +150
°C
MAXIMUM RATINGS † (TJ = 25°C unless otherwise noted)
Rating
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
2.0
°C/W
Maximum Lead Temperature for Soldering
Purposes 1/8
″ from Case for 10 Seconds
TL
260
°C
†Indicates JEDEC Registered Data
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
SCRs
12 AMPERES RMS
50 thru 800 VOLTS
K
G
A
Preferred devices are recommended choices for future use
and best overall value.
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4
Anode
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
TO−220AB
CASE 221A
STYLE 3
1
2
3
4
2N639x = Device Code
x = 4, 5, 7, or 9
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
MARKING
DIAGRAM
2N639xG
AYWW


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