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STSJ100NH3LL Datasheet(PDF) 3 Page - STMicroelectronics |
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STSJ100NH3LL Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 11 page 3/11 STSJ100NH3LL ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic Table 8: Switching On Table 9: Switching Off Table 10: Source Drain Diode Notes 1. This value is noted according to Rthj-pcb 2. This value is noted according to Rthj-c 3. Pulse width limited by safe operating area 4. When Mounted on 1 inch² FR-4 board, 2 oz Cu (t ≤ 10 sec.) 5. Pulsed: pulse duration=300µs, duty cycle 1.5% Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (5) Forward Transconductance VDS=10V, ID = 12.5A 30 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 4450 655 50 pF pF pF RG Gate Input Resistance f=1MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain 1 2 3 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 15V, ID = 12.5A RG = 4.7Ω , VGS = 10V (see Figure 15) 18 50 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=15V, ID=25A VGS=4.5V (see Figure 17) 30 12.5 10 40 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 15V, ID = 12.5A RG = 4.7Ω , VGS = 10V (see Figure 15) 75 8 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM Source-drain Current Source-drain Current (pulsed) 25 100 A A VSD(5) Forward On Voltage ISD = 25A ,VGS = 0 1.3 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 25A, di/dt = 100A/µs VDD = 25V, Tj = 150°C (see Figure 16) 32 34 2.1 ns nC A |
Similar Part No. - STSJ100NH3LL_05 |
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Similar Description - STSJ100NH3LL_05 |
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