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SIE812DF Datasheet(PDF) 2 Page - Vishay Siliconix |
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SIE812DF Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 3 page Vishay Siliconix SPICE Device Model SiE812DF SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.2 V On-State Drain Current a ID(on) VDS = 10 V, VGS = 10 V 211 A VGS = 10 V, ID = 25 A 0.0022 0.0022 Drain-Source On-State Resistance a rDS(on) VGS = 4.5 V, ID = 25 A 0.0027 0.0028 Ω Forward Transconductance a gfs VDS = 20 V, ID = 25 A 114 154 S Forward Voltage a VSD IS = 10 A 0.77 0.80 V Dynamic b Input Capacitance Ciss 7360 8300 Output Capacitance Coss 822 800 Reverse Transfer Capacitance Crss VDS = 20 V, VGS = 0 V, f = 1 MHz 296 360 pF VDS = 20V, VGS = 10 V, ID = 25 A 114 111 Total Gate Charge Qg 57 52 Gate-Source Charge Qgs 25 25 Gate-Drain Charge Qgd VDS = 20 V, VGS = 4.5 V, ID = 25 A 15 15 nC Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. 2 www.vishay.com Document Number: 74219 S-62042 Rev. A, 16-Oct-06 |
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