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IRF511 Datasheet(PDF) 1 Page - Harris Corporation |
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IRF511 Datasheet(HTML) 1 Page - Harris Corporation |
1 / 7 page 5-1 Semiconductor Features • 4.9A, and 5.6A, 80V and 100V •rDS(ON) = 0.54Ω and 0.74Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching conver- tors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17441. Symbol Packaging JEDEC TO-220AB Ordering Information PART NUMBER PACKAGE BRAND IRF510 TO-220AB IRF510 IRF511 TO-220AB IRF511 IRF512 TO-220AB IRF512 IRF513 TO-220AB IRF513 NOTE: When ordering, include the entire part number. D G S SOURCE DRAIN (FLANGE) DRAIN GATE January 1998 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1997 File Number 1573.2 IRF510, IRF511, IRF512, IRF513 4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs |
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