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ST72324 Datasheet(PDF) 17 Page - STMicroelectronics |
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ST72324 Datasheet(HTML) 17 Page - STMicroelectronics |
17 / 163 page ST72324 17/163 4 FLASH PROGRAM MEMORY 4.1 Introduction The ST7 dual voltage High Density Flash (HDFlash) is a non-volatile memory that can be electrically erased as a single block or by individu- al sectors and programmed on a Byte-by-Byte ba- sis using an external VPP supply. The HDFlash devices can be programmed and erased off-board (plugged in a programming tool) or on-board using ICP (In-Circuit Programming) or IAP (In-Application Programming). The array matrix organisation allows each sector to be erased and reprogrammed without affecting other sectors. 4.2 Main Features ■ Three Flash programming modes: – Insertion in a programming tool. In this mode, all sectors including option bytes can be pro- grammed or erased. – ICP (In-Circuit Programming). In this mode, all sectors including option bytes can be pro- grammed or erased without removing the de- vice from the application board. – IAP (In-Application Programming) In this mode, all sectors except Sector 0, can be pro- grammed or erased without removing the de- vice from the application board and while the application is running. ■ ICT (In-Circuit Testing) for downloading and executing user application test patterns in RAM ■ Read-out protection ■ Register Access Security System (RASS) to prevent accidental programming or erasing 4.3 Structure The Flash memory is organised in sectors and can be used for both code and data storage. Depending on the overall Flash memory size in the microcontroller device, there are up to three user sectors (see Table 3). Each of these sectors can be erased independently to avoid unnecessary erasing of the whole Flash memory when only a partial erasing is required. The first two sectors have a fixed size of 4 Kbytes (see Figure 6). They are mapped in the upper part of the ST7 addressing space so the reset and in- terrupt vectors are located in Sector 0 (F000h- FFFFh). Table 3. Sectors available in Flash devices 4.3.1 Read-out Protection Read-out protection, when selected, provides a protection against Program Memory content ex- traction and against write access to Flash memo- ry. Even if no protection can be considered as to- tally unbreakable, the feature provides a very high level of protection for a general purpose microcon- troller. In flash devices, this protection is removed by re- programming the option. In this case, the entire program memory is first automatically erased. Read-out protection selection depends on the de- vice type: – In Flash devices it is enabled and removed through the FMP_R bit in the option byte. – In ROM devices it is enabled by mask option specified in the Option List. Figure 6. Memory Map and Sector Address Flash Size (bytes) Available Sectors 4K Sector 0 8K Sectors 0,1 > 8K Sectors 0,1, 2 4 Kbytes 4 Kbytes 2Kbytes SECTOR 1 SECTOR 0 16 Kbytes SECTOR 2 8K 16K 32K 60K FLASH FFFFh EFFFh DFFFh 3FFFh 7FFFh 1000h 24 Kbytes MEMORY SIZE 8Kbytes 40 Kbytes 52 Kbytes 9FFFh BFFFh D7FFh 4K 10K 24K 48K 1 |
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