STGB10NB60S datasheet(2/13 Pages) STMICROELECTRONICS

Part #	STGB10NB60S

Description	N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STGP10NB60S - STGP10NB60SFP - STGB10NB60S

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Table 3: Absolute Maximum ratings

(1)Pulse width limited by max. junction temperature.

Table 4: Thermal Data

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

Table 5: Off

Table 6: On

Symbol

Parameter

Value

Unit

TO-220/D²PAK

TO-220FP

VCES

Collector-Emitter Voltage (VGS = 0)

600

V

VECR

Reverse Battery Protection

20

V

VGE

Gate-Emitter Voltage

± 20

V

IC

Collector Current (continuous) at 25°C20

A

IC

Collector Current (continuous) at 100°C10

A

ICM (1)

Collector Current (pulsed)

80

A

PTOT

Total Dissipation at TC = 25°C

80

25

W

Derating Factor

0.64

0.20

W/°C

VISO

Insulation Withstand Voltage A.C.(t=1sec, Tc=25°C)

--

2500

V

Tstg

Storage Temperature

– 55 to 150

°C

Tj

Operating Junction Temperature

Min.

Typ.

Max.

Unit

Rthj-case

Thermal Resistance Junction-case

TO-220

D²PAK

1.56

°C/W

TO-220FP

5.0

°C/W

Rthj-amb

Thermal Resistance Junction-ambient

62.5

°C/W

TL

Maximum Lead Temperature for Soldering Purpose

(1.6 mm from case, for 10 sec.)

300

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VBR(CES)

Collectro-Emitter

Breakdown Voltage

IC = 250 µA, VGE = 0

600

V

VBR(ECS)

Emitter-Collector

Breakdown Voltage

IC = 1mA, VGE = 0

20

V

ICES

Collector cut-off

(VGE = 0)

VGE = Max Rating, Tc=25°C

VCE = Max Rating, Tc=125°C

10

100

µA

IGES

Gate-Emitter Leakage

Current (VCE = 0)

VGE = ± 20 V , VCE = 0

±100

nA

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGE(th)

Gate Threshold Voltage

VCE= VGE, IC= 250 µA

2.5

5

V

VCE(SAT)

Collector-Emitter

Saturation Voltage

VGE=15 V, IC= 5 A,

VGE=15 V, IC= 10 A,

VGE=15 V, IC= 10 A, Tj= 125°C

1.15

1.35

1.25

1.7

V

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