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STGF10NC60KD Datasheet(PDF) 3 Page - STMicroelectronics

Part No. STGF10NC60KD
Description  N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH TM IGBT
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGF10NC60KD Datasheet(HTML) 3 Page - STMicroelectronics

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STGB10NC60KD - STGP10NC60KD - STGF10NC60KD
Electrical ratings
3/17
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
D²PAK/TO-220 TO-220FP
VCES
Collector-emitter voltage (VGS = 0)
600
V
IC
(1)
1.
Calculated according to the iterative formula:
Collector current (continuous) at TC = 25°C
20
9
A
IC
(1)
Collector current (continuous) at TC = 100°C
10
6
A
ICM
(2)
2.
Pulse width limited by max junction temperature
Collector current (pulsed)
30
A
VGE
Gate-emitter voltage
±20
V
IF
Diode RMS forward current at Tc=25°C
10
A
PTOT
Total dissipation at TC = 25°C
60
25
W
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1s;TC=25°C)
--
2500
Tstg
Storage temperature
– 55 to 150
°C
Tj
Operating junction temperature
Tscw
Short circuit withstand time
10
µs
Tl
Maximum lead temperature for soldering purpose
(for 10sec. 1.6 mm from case)
300
°C
Table 2.
Thermal resistance
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case Max
TO-220/D²PAK
2.08
°C/W
TO-220FP
5.0
°C/W
Rthj-amb
Thermal resistance junction-ambient Max
62.5
°C/W
I
C
T
C
()
T
JMAX
T
C
R
THJ
C
V
CESAT MAX
()
T
C
I
C
,
()
×
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