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STGD7NB60K Datasheet(PDF) 3 Page - STMicroelectronics |
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STGD7NB60K Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 15 page STGD7NB60K - STGP7NB60K Electrical ratings 3/15 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit TO-220 DPAK VCES Collector-emitter voltage (VGS = 0) 600 V IC (1) 1. Calculated according to the iterative formula:: Collector current (continuous) at TC = 25°C 14 A IC (1) Collector current (continuous) at TC = 100°C 7A ICM (2) 2. Pulse width limited by max junction temperature Collector current (pulsed) 56 A VGE Gate-emitter voltage ±20 V PTOT Total dissipation at TC = 25°C 80 70 W TSC Short circuit withstand 0.64 0.56 µs Tstg Storage temperature – 65 to 150 °C Tj Operating junction temperature 150 Table 2. Thermal resistance Symbol Parameter TO-220 DPAK Unit Rthj-case Thermal resistance junction-case Max 1.56 1.4 °C/W Rthj-amb Thermal resistance junction-ambient Max 62.5 100 °C/W I C T C () T JMAX T C – R THJ C – V CESAT MAX () T C I C , () × ------------------------------------------------------------------------------------------------------ = |
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