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STGD7NB60K Datasheet(PDF) 4 Page - STMicroelectronics

Part No. STGD7NB60K
Description  N-channel 600V - 7A - TO-220 / DPAK Short circuit rated PowerMESH TM IGBT
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGD7NB60K Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STGD7NB60K - STGP7NB60K
4/15
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VBR(CES)
Collector-emitter
breakdown voltage
IC= 1mA, VGE= 0
600
V
VCE(sat)
Collector-emitter saturation
voltage
VGE= 15V, IC= 7A
VGE= 15V, IC= 7A, Tc= 125°C
2.3
1.9
2.8
V
V
VGE(th)
Gate threshold voltage
VCE= VGE, IC= 250 µA
57
V
ICES
Collector cut-off current
(VGE = 0)
VCE= Max rating,TC= 25°C
VCE=Max rating,TC= 125°C
50
500
µA
µA
IGES
Gate-emitter leakage
current (VCE = 0)
VGE= ±20V, VCE= 0
±100
nA
gfs
Forward transconductance
VCE = 15V, IC= 7A
3.7
S
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer
capacitance
VCE = 25V, f = 1MHz,
VGE = 0
495
77
13
pF
pF
pF
Qg
Qge
Qgc
Total gate charge
Gate-emitter charge
Gate-collector charge
VCE = 480V, IC = 7A,
VGE = 15V,
(see Figure 17)
32.7
5.9
18.3
45
nC
nC
nC
tscw
Short circuit withstand time
VCE=0.5V VBR(CES), RG=10Ω
VGE=15V, Tj=125°C
10
µs


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