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STGB10NC60KT4 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STGB10NC60KT4
Description  N-channel 600V - 10A - D2PAK / TO-220 / DPAK Short circuit rated PowerMESH TM IGBT
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGB10NC60KT4 Datasheet(HTML) 5 Page - STMicroelectronics

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STGB10NC60K - STGP10NC60K - STGD10NC60K
Electrical characteristics
5/17
Table 5.
Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 390V, IC = 5A
RG= 10Ω, VGE= 15V, Tj= 25°C
(see Figure 17)
17
6
655
ns
ns
A/µs
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 390V, IC = 5A
RG= 10Ω, VGE= 15V, Tj=125°C
(see Figure 17)
16.5
6.5
575
ns
ns
A/µs
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
Vcc = 390V, IC = 5A,
RGE = 10Ω, VGE = 15V,TJ=25°C
(see Figure 17)
33
72
82
ns
ns
ns
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
Vcc = 390V, IC = 5A,
RGE=10Ω, VGE =15V, Tj=125°C
(see Figure 17)
60
106
136
ns
ns
ns
Table 6.
Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
Eon
(1)
Eoff
(2)
Ets
1.
Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a
package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same
temperature (25°C and 125°C)
2.
Turn-off losses include also the tail of the collector current
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390V, IC = 5A
RG=10Ω, VGE=15V, Tj=25°C
(see Figure 17)
55
85
140
µJ
µJ
µJ
Eon
(1)
Eoff
(2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390V, IC = 5A
RG=10Ω, VGE= 15V,
Tj= 125°C
(see Figure 17)
87
162
249
µJ
µJ
µJ


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