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STGB10NC60HD Datasheet(PDF) 4 Page - STMicroelectronics

Part No. STGB10NC60HD
Description  N-channel 600V - 10A - TO-220 - D2PAK Very fast PowerMESH TM IGBT
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGB10NC60HD Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STGB10NC60HD - STGP10NC60HD
4/15
Table 5.
Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 390V, IC = 5A
RG= 10Ω, VGE= 15V, Tj=
25°C
(see Figure 16)
14.2
5
1000
ns
ns
A/µs
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 390V, IC = 5A
RG= 10Ω, VGE= 15V,
Tj=125°C
(see Figure 16)
14
5
920
ns
ns
A/µs
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
Vcc = 390V, IC = 5A,
RGE = 10Ω, VGE =
15V,TJ=25°C
(see Figure 16)
27
72
85
ns
ns
ns
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
Vcc = 390V, IC = 5A,
RGE=10Ω, VGE =15V,
Tj=125°C
(see Figure 16)
50
108
139
ns
ns
ns
Table 6.
Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Eon
(1)
Eoff
(2)
Ets
1.
Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in
a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
2.
Turn-off losses include also the tail of the collector current
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390V, IC = 5A
RG=10Ω, VGE=15V,
Tj=25°C
(see Figure 16)
31.8
95
126.8
µJ
µJ
µJ
Eon
(1)
Eoff
(2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390V, IC = 5A
RG=10Ω, VGE= 15V,
Tj= 125°C
(see Figure 16)
61.8
173
234.8
µJ
µJ
µJ


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