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STGB10NB37LZ Datasheet(PDF) 1 Page - STMicroelectronics

Part No. STGB10NB37LZ
Description  N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMesh TM IGBT
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGB10NB37LZ Datasheet(HTML) 1 Page - STMicroelectronics

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June 2001
STGB10NB37LZ
N-CHANNEL CLAMPED 20A - D2PAK
INTERNALLY CLAMPED PowerMesh™ IGBT
s
POLYSILICON GATE VOLTAGE DRIVEN
s
LOW THRESHOLD VOLTAGE
s
LOW ON-VOLTAGE DROP
s
LOW GATE CHARGE
s
HIGH CURRENT CAPABILITY
s
HIGH VOLTAGE CLAMPING FEATURE
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESHIGBTs, with outstanding
performances. The built in collector-gate zener
exhibits a very precise active clamping while the
gate-emitter zener supplies an ESD protection.
APPLICATIONS
s
AUTOMOTIVE IGNITION
ABSOLUTE MAXIMUM RATINGS
TYPE
VCES
VCE(sat)
IC
STGB10NB37LZ
CLAMPED
< 1.8 V
20 A
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VGS = 0)
CLAMPED
V
VECR
Reverse Battery Protection
18
V
VGE
Gate-Emitter Voltage
CLAMPED
V
IC
Collector Current (continuos) at TC = 100°C
20
A
ICM
Collector Current (pulse width < 100
µs)
60
A
PTOT
Total Dissipation at TC = 25°C
125
W
Derating Factor
0.83
W/°C
ESD
ESD (Human Body Model)
4
KV
Tstg
Storage Temperature
–65 to 175
°C
Tj
Max. Operating Junction Temperature
175
°C
D2PAK
1
3
INTERNAL SCHEMATIC DIAGRAM


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