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STGB6NC60HD Datasheet(PDF) 4 Page - STMicroelectronics

Part No. STGB6NC60HD
Description  N-channel 600V - 7A - D2PAK / TO-220 / TO-220FP Very fast PowerMESH TM IGBT
Download  17 Pages
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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STGB6NC60HD Datasheet(HTML) 4 Page - STMicroelectronics

 
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Electrical characteristics
STGB6NC60HD - STGP6NC60HD - STGF6NC60HD
4/17
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VBR(CES)
Collector-emitter
breakdown voltage
IC = 1mA, VGE = 0
600
V
VCE(sat)
Collector-emitter saturation
voltage
VGE = 15V, IC= 3A
VGE= 15V, IC= 3A, Tc= 125°C
1.9
1.7
2.5
V
V
VGE(th)
Gate threshold voltage
VCE= VGE, IC= 250 µA
3.75
5.75
V
ICES
Collector cut-off current
(VGE = 0)
VCE = Max rating,TC= 25°C
VCE = Max rating,TC= 125°C
10
1
µA
mA
IGES
Gate-emitter leakage
current (VCE = 0)
VGE = ±20V , VCE= 0
±100
nA
gfs
Forward transconductance
VCE = 15V, IC= 3A
3S
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer
capacitance
VCE = 25V, f = 1MHz,
VGE = 0
205
32
5.5
pF
pF
pF
Qg
Qge
Qgc
Total gate charge
Gate-emitter charge
Gate-collector charge
VCE = 390V, IC = 3A,
VGE = 15V,
(see Figure 18)
13.6
3.4
5.1
nC
nC
nC
ICL
Turn-off SOA minimum
current
Vclamp = 390V, Tj = 150°C,
RG = 10Ω, VGE = 15V
19
A


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