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STD888T4 Datasheet(PDF) 4 Page - STMicroelectronics

Part No. STD888T4
Description  Medium Current, High Performance, Low Voltage PNP Transistor
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD888T4 Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STD888T4
4/10
2
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Note (2) Pulsed duration = 300
µs, duty cycle ≤1.5%
Table 3.
Electrical characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE =0)
VCB = -30V
VCB = -30V;
TC = 100°C
-10
100
µA
µA
IEBO
Emitter cut-off current
(IC =0)
VEB = -6V
-10
µA
V(BR)CEO (2)
Collector-emitter
breakdown voltage
(IB =0)
IC = -10mA
-30
V
V(BR)CBO
Collector-base
breakdown voltage
(IE =0)
IC = -100µA
-45
V
V(BR)EBO
Emitter-base breakdown
voltage (IC =0)
IE = -100µA
-6
V
VCE(sat) (2) Collector-emitter
saturation voltage
IC = -0.5A
IB = -5mA
IC = -2A
IB = -50mA
IC = -5A
IB = -250mA
IC = -6A
IB = -250mA
IC = -8A
IB = -400mA
IC = -10A
IB = -500mA
-0.7
-1
-1.2
-0.15
-0.35
-0.7
V
V
V
V
V
V
VBE(sat) (2)
Base-emitter saturation
voltage
IC = -2A
IB = -50mA
IC = -6A
IB = -250mA
-1.2
-1.1
V
V
hFE (2)
DC current gain
IC = -10mA
VCE = -1V
IC = -500mA VCE = -1V
IC = -5A
VCE = -1V
IC = -5A
VCE = -1V
TC = 100°C
IC = -8A
VCE = -1V
IC = -10A
VCE = -1V
120
100
70
200
200
100
100
55
35
300
td
tr
ts
tf
Resistive load
Delay time
Rise time
Storage time
Fall time
IC = -3A
VCC = -20V
IB1 = -IB2 = -60mA
(see figure 7)
180
160
250
80
220
210
300
100
ns
ns
ns
ns


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