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STD790AT4 Datasheet(PDF) 4 Page - STMicroelectronics |
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STD790AT4 Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 10 page  Electrical characteristics STD790AT4 4/10 2 Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 3. Electrical characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE =0) VCB = -30V VCB = -30V; TC= 100°C -10 100 µA µA IEBO Emitter cut-off current (IC =0) VEB = -4V -10 µA V(BR)CEO (2) Collector-emitter breakdown voltage (IB =0) IC = -10mA -30 V V(BR)CER (2) Collector-emitter breakdown voltage (RBE = 47Ω) IC = -10mA -40 V V(BR)CBO Collector-base breakdown voltage (IE =0) IC = -100µA -40 V V(BR)EBO Emitter-base breakdown voltage (IC =0) IE = -100µA -5 V VCE(sat) (2) Collector-emitter saturation voltage IC = -0.5A IB = -5mA IC = -1.2A IB = -20mA IC = -2A IB = -20mA IC = -3A IB = -100mA IC = -3A IB = -100mA TJ = 100°C -0.15 -0.25 -0.5 -0.7 -0.9 V V V V V VBE(sat) (2) Base-emitter saturation voltage IC = -1A IB = -10mA -0.8 -1 V VBE(on) (2) Base-emitter on voltage IC = -1A VCE = -2V -0.8 -1 V hFE (2) DC current gain IC = -10mA VCE = -2V IC = -500mA VCE = -2V IC = -1A VCE = -2V IC = -2A VCE = -1V IC = -3A VCE = -1V 100 100 100 100 90 200 200 160 130 400 400 |
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