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STD790AT4 Datasheet(PDF) 4 Page - STMicroelectronics

Part No. STD790AT4
Description  Medium Current, High Performance, Low Voltage PNP Transistor
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD790AT4 Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STD790AT4
4/10
2
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 3.
Electrical characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE =0)
VCB = -30V
VCB = -30V;
TC= 100°C
-10
100
µA
µA
IEBO
Emitter cut-off current
(IC =0)
VEB = -4V
-10
µA
V(BR)CEO (2)
Collector-emitter
breakdown voltage
(IB =0)
IC = -10mA
-30
V
V(BR)CER (2)
Collector-emitter
breakdown voltage
(RBE = 47Ω)
IC = -10mA
-40
V
V(BR)CBO
Collector-base
breakdown voltage
(IE =0)
IC = -100µA
-40
V
V(BR)EBO
Emitter-base breakdown
voltage (IC =0)
IE = -100µA
-5
V
VCE(sat) (2) Collector-emitter
saturation voltage
IC = -0.5A
IB = -5mA
IC = -1.2A
IB = -20mA
IC = -2A
IB = -20mA
IC = -3A
IB = -100mA
IC = -3A
IB = -100mA
TJ = 100°C
-0.15
-0.25
-0.5
-0.7
-0.9
V
V
V
V
V
VBE(sat) (2)
Base-emitter saturation
voltage
IC = -1A
IB = -10mA
-0.8
-1
V
VBE(on) (2) Base-emitter on voltage
IC = -1A
VCE = -2V
-0.8
-1
V
hFE (2)
DC current gain
IC = -10mA
VCE = -2V
IC = -500mA
VCE = -2V
IC = -1A
VCE = -2V
IC = -2A
VCE = -1V
IC = -3A
VCE = -1V
100
100
100
100
90
200
200
160
130
400
400


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