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STC08IE120HV Datasheet(PDF) 4 Page - STMicroelectronics

Part # STC08IE120HV
Description  Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ohm
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STC08IE120HV Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STC08IE120HV
4/11
2
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 3.
Electrical characteristics
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ICS(SS)
Collector-source current
(VBS = VGS = 0)
VCE = 1200V
100
µA
IBS(OS)
Base-source current
(IC = 0, VGS = 0)
VBS(OS) = 30V
10
µA
ISB(OS)
Source-base current
(IC = 0, VGS = 0)
VSB(OS) = 17V
100
µA
IGS(OS)
Gate-source leakage
VGS = ± 17V
100
nA
VCS(ON)
Collector-source ON
voltage
VGS = 10V _IC = 8A
IB = 1.6A
VGS = 10V_ IC = 4A
IB = 0.4A
0.8
0.5
1
1.2
V
V
hFE
DC current gain
VGS = 10V_ IC = 8A
VCS = 1V
VGS = 10V_ IC = 4A_ VCS = 1V
5
7
VBS(ON) Base Source ON voltage
VGS = 10V_ IC = 8A IB = 1.6A
VGS = 10V_ IC = 4A_ IB = 0.4A
1.5
1.5
V
V
VGS(th)
Gate threshold voltage
VBS = VGS ______IB = 250µA
23
4V
CISS
Input capacitance
VCS = 25V ______f = 1MHz
VGS = 0
550
pF
QGS(tot)
Gate-source charge
VGS = 10V
26
nC
ts
tf
INDUCTIVE LOAD
Storage time
Fall time
IC = 4A
IB = 0.8A VGS = 10V
VClamp = 960V RG = 47Ω
tp = 4µs
670
15
ns
ns
ts
tf
INDUCTIVE LOAD
Storage time
Fall time
IC = 4A
IB = 0.4A VGS = 10V
VClamp = 960V RG = 47Ω
tp = 4µs
340
10.2
ns
ns
VCSW
Maximum collector-
source voltage switched
without snubber
RG = 47Ω hFE = 5A IC = 8A
1200
V
VCS(dyn)
Collector-source
dynamic voltage
(500ns)
VCC = VClamp = 400V VGS = 10V
RG = 47Ω
IC = 4A IB = 0.8A
IBpeak = 4A
tpeak = 500ns
5.75
V
VCS(dyn)
Collector-source
dynamic voltage
(1 µs)
VCC = VClamp = 400V VGS = 10V
RG = 47Ω
IC = 4A IB = 0.8A
IBpeak = 4A
tpeak = 500ns
3.35
V


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