www.ti.com

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM POWER DISSIPATION RATINGS

THERMAL CHARACTERISTICS

SN65HVD251

SLLS545C – NOVEMBER 2002 – REVISED SEPTEMBER 2005

These devices have limited built-in ESD protection. The leads should be shorted together or the device

placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

SN65HVD251

-0.3 V to 7 V

Voltage range at any bus terminal (CANH or CANL)

-36 V to 36 V

Transient voltage per ISO 7637, pulse 1, 2, 3a, 3b

CANH, CANL

±200 V

–10 mA to 10 mA

CANH, CANL and GND

14 kV

Electrostatic discharge

All pins

6 kV

All pins

1 kV

Continuous total power dissipation

(see Dissipation Rating

Table)

(1)

Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating

conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values, except differential I/O bus voltages, are with respect to network ground terminal.

(3)

Tested in accordance with JEDEC Standard 22, Test Method A114-A.

(4)

Tested in accordance with JEDEC Standard 22, Test Method C101.

CIRCUIT BOARD

PACKAGE

MODEL

POWER RATING

RATING

RATING

576 mW

4.8 mW/°C

288 mW

96 mW

SOIC (D)

924 mW

7.7 mW/°C

462 mW

154 mW

888 mW

7.4 mW/°C

444 mW

148 mW

PDIP (P)

1212 mW

10.1 mW/°C

606 mW

202 mW

(1)

This is the inverse of the junction-to-ambient thermal resistance when board-mounted and with no air flow.

(2)

In accordance with the Low-K thermal metric definitions of EIA/JESD51-3.

(3)

In accordance with the High-K thermal metric definitions of EIA/JESD51-7.

PARAMETER

TEST CONDITIONS

VALUE

UNITS

MIN

TYP

MAX

D

78.7

Θ

JB

Junction-to-board thermal resistance

°C/W

P

48.9

D

44.6

Θ

JC

Junction-to-case thermal resistance

°C/W

P

66.6

97.7

mW

50% duty cycle square wave

Device power dissipation

142

mW

duty cycle square wave

Thermal shutdown junction temperature

165

°C

2