 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
STB70NFS03L Datasheet(PDF) 4 Page - STMicroelectronics |
|
||||||||||||||||||||||||||||||
STB70NFS03L Datasheet(HTML) 4 Page - STMicroelectronics |
|
|
4 / 13 page 
Electrical characteristics STB70NFS03L 4/13 2 Electrical characteristics (Tcase =25°C unless otherwise specified) Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250µA, VGS = 0 30 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, TC=125°C 200 20 µA mA IGSS Gate-body leakage current (VDS = 0) VGS = ± 18V ± 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA 1 V RDS(on) Static drain-source on resistance VGS = 10V, ID = 35A VGS = 5V, ID = 18A 0.0075 0.0135 0.0095 0.018 Ω Ω Table 5. Shottcky static Symbol Parameter Test conditions Min. Typ. Max. Unit IR Reverse leakage current Tj = 25°C VR = 30V Tj = 100°C VR = 30V 0.03 0.2 100 mA mA VF Zero gate voltage drain current (VGS = 0) Tj = 25°C IF = 3A Tj = 125°C IF = 3A 0.425 0.51 0.46 V V Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs Forward transconductance VDS = 25V, ID = 35A 25 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 1440 560 135 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 15V, ID = 70A, VGS = 5V (see Figure 11) 22.5 9 12 30 nC nC nC |
English ▼
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
