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STB70NFS03L Datasheet(PDF) 4 Page - STMicroelectronics

Part No. STB70NFS03L
Description  N-channel - 30V - 0.0075ohm - 70A D2PAK STripFET TM Power MOSFET plus schottky rectifier
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB70NFS03L Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STB70NFS03L
4/13
2
Electrical characteristics
(Tcase =25°C unless otherwise specified)
Table 4.
On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 250µA, VGS = 0
30
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating, TC=125°C
200
20
µA
mA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 18V
± 100
nA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250µA
1
V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 35A
VGS = 5V, ID = 18A
0.0075
0.0135
0.0095
0.018
Table 5.
Shottcky static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR
Reverse leakage
current
Tj = 25°C VR = 30V
Tj = 100°C VR = 30V
0.03
0.2
100
mA
mA
VF
Zero gate voltage
drain current (VGS = 0)
Tj = 25°C IF = 3A
Tj = 125°C IF = 3A
0.425
0.51
0.46
V
V
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
Forward
transconductance
VDS = 25V, ID = 35A
25
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz, VGS = 0
1440
560
135
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 15V, ID = 70A,
VGS = 5V
(see Figure 11)
22.5
9
12
30
nC
nC
nC


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