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STB70NFS03L Datasheet(PDF) 3 Page - STMicroelectronics |
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STB70NFS03L Datasheet(HTML) 3 Page - STMicroelectronics |
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STB70NFS03L Electrical ratings 3/13 1 Electrical ratings Table 1. Mosfet absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 30 V VGS Gate- source voltage ± 18 V ID Drain current (continuous) at TC = 25°C 70 A ID Drain current (continuous) at TC = 100°C 50 A IDM (1) 1. Pulse width limited by safe operating area Drain current (pulsed) 280 A PTOT Total dissipation at TC = 25°C 100 W Derating factor 0.67 W/°C dv/dt (2) 2. ISD < 70A, di/dt < 350A/µs, VDD = 80% V(BR)DSS Peak diode recovery voltage slope 5.5 V/ns EAS (3) 3. Starting Tj = 25°C, VDD = 25V Single pulse avalanche energy 500 mJ Tstg Storage temperature -55 to 175 °C TJ Operating junction temperature Table 2. Schottky absolute maximum ratings Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 30 V IF(RMS) RMS forward current 20 A IF(AV) Average forward current TL=125°C δ=0.5 3A IFSM Surge non repetitive forward current tp=10ms Sinusoidal 75 A dv/dt Critical rate of rise of reverse voltage 10000 v/µs Table 3. Thermal data Symbol Parameter Value Unit Rthj-amb Thermal resistance junction-amb max 1.5 °C/W Rthj-case Thermal resistance junction-case max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C |
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