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MD2009DFX_0610 Datasheet(PDF) 3 Page - STMicroelectronics |
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MD2009DFX_0610 Datasheet(HTML) 3 Page - STMicroelectronics |
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MD2009DFX Electrical characteristics 3/10 2 Electrical characteristics (Tcase =25°C unless otherwise specified) Table 3. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICES Collector cut-off current (VBE = 0) VCE = 1500V VCE = 1500V, Tc= 125°C 0.2 2 mA mA IEBO Emitter Cut-off Current (IC = 0) VEB = 5V 40 120 mA V(BR)EBO Emitter-base breakdown voltage (IC = 0) IE = 700mA 10 V VCE(sat) (1) 1. Pulsed duration = 300 ms, duty cycle ≤1.5%. Collector-emitter saturation voltage IC = 5.5A , IB = 1.4A 2.8 V VBE(sat) (1) Base-emitter saturation voltage IC = 5.5A , IB = 1.4A 1.3 V hFE (1) DC current gain IC = 1A, VCE = 5V IC = 5.5A, VCE = 1V IC = 5.5A , VCE = 5V 5 18 4.7 7 Vf Diode forward voltage IF= 5.5 A 1.6 V ts tf Inductive load Storage time Fall time IC = 5A,,, fh = 16KHz IB(on) = 1.5A,, VBE(off) = -2.7V LBB(off) = 6.2µH 4.5 0.3 6 0.6 µs µs |
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