400MHz to 2500MHz SiGe

Ultra-Low-Noise Amplifiers

2

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ABSOLUTE MAXIMUM RATINGS

DC ELECTRICAL CHARACTERISTICS

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional

operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to

absolute maximum rating conditions for extended periods may affect device reliability.

RFIN Power (50

Ω source) (Note 1) ..................................+5dBm

SOT23-6 (derate 8.7mW/°C above +70°C)..................696mW

Operating Temperature Range ...........................-40°C to +85°C

Maximum Junction Temperature .....................................+150°C

Storage Temperature Range .............................-65°C to +160°C

Lead Temperature (soldering, 10s) .................................+300°C

CONDITIONS

mA

3.5

4.7

V

2.7

5.5

Operating Supply Voltage

Operating Supply Current

UNITS

MIN

TYP

MAX

PARAMETER

(Note 6)

(Note 5)

(Note 4)

(Note 4)

CONDITIONS

dBm

-4

Input Third-Order Intercept Point

dBm

-21

Input 1dB Gain Compression Point

dB

30

Reverse Isolation

dB

-12

Output Return Loss

dB

-12

Input Return Loss

dB

1.3

1.5

Noise Figure

dB

0.9

2.4

Gain Variation Over Temperature

dB

12.4

14.4

Gain

MHz

1400

2500

RFIN Frequency Range

dB

12.8

15.1

Gain

MHz

400

1500

RFIN Frequency Range

dBm

-10

Input Third-Order Intercept Point

dBm

-22

Input 1dB Gain Compression Point

dB

40

Reverse Isolation

dB

0.6

1.7

Gain Variation Over Temperature

dB

0.9

1.1

Noise Figure

dB

-11

Input Return Loss

dB

-14

Output Return Loss

UNITS

MIN

TYP

MAX

PARAMETER

RF ELECTRICAL CHARACTERISTICS

Note 1: Pin must be AC-coupled with a DC blocking capacitor.

6.4

CAUTION! ESD SENSITIVE DEVICE