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ILD32-X007 Datasheet(PDF) 2 Page - Vishay Siliconix

Part # ILD32-X007
Description  Optocoupler, Photodarlington Output, High Gain (Dual, Quad Channel)
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

ILD32-X007 Datasheet(HTML) 2 Page - Vishay Siliconix

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Document Number 83650
Rev. 1.5, 26-Oct-04
ILD32/ ILQ32
Vishay Semiconductors
Output
Coupler
1) between emitter and detector refer to standard climate 23 °C/50 %RH; DIN 50014
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
Parameter
Test condition
Symbol
Value
Unit
Collector-emitter breakdown
voltage
BVCEO
30
V
Collector (load) current
IC
125
mA
Power dissipation
Pdiss
150
mW
Derate linearly from 25°C
2.0
mW/°C
Parameter
Test condition
Part
Symbol
Value
Unit
Isolation test voltage 1)
t = 1.0 sec.
VISO
5300
VRMS
Creepage
≥ 7mm
Clearance
≥ 7mm
Comparative tracking index per
DIN IEC 112/VDE303, part 1
≥ 175
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
1012
VIO = 500 V, Tamb = 100 °C
RIO
1011
Total dissipation
ILD32
Ptot
400
mW
ILQ32
Ptot
500
mW
Derate linearly from 25 °C
ILD32
5.33
mW/°C
ILQ32
6.67
mW/°C
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
Lead soldering time at 260 °C
10
sec.
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
IF = 10 mA
VF
1.25
1.5
V
Reverse current
VR = 3.0 V
IR
0.1
100
pF
Capacitance
VR = 0 V
CO
25
pF
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Collector-emitter breakdown
voltage
IC = 100 µA, IF = 0
BVCEO
30
V
Breakdown voltage emitter-
collector
IE = 100 µABCECO
5.0
10
nA
Collector-emitter leakage
current
VCE = 10 V, IF = 0
ICEO
1.0
100
nA


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