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BUL1203EFP Datasheet(PDF) 2 Page - STMicroelectronics

Part No. BUL1203EFP
Description  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BUL1203EFP Datasheet(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
3.47
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = 0)
VCE = 1200 V
100
µA
ICEO
Collector Cut-off
Current (IB = 0)
VCE = 550 V
100
µA
VCEO(sus)
∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 mA
L = 25 mH
550
V
VEBO
Emitter-Base Voltage
(IC = 0)
IE = 10 mA
9
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 1 A
IB = 0.2 A
IC = 2 A
IB = 0.4 A
IC = 3 A
IB = 1 A
0.5
0.7
1.5
V
V
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 2 A
IB = 0.4 A
IC = 3 A
IB = 1 A
1.5
1.5
V
V
hFE
DC Current Gain
IC = 1 mA
VCE = 5 V
IC = 10 mA
VCE = 5 V
IC = 0.8 A
VCE = 3 V
IC = 2 A
VCE = 5 V
10
10
14
9
32
28
ton
ts
tf
RESISTIVE LOAD
Turn-on Time
Storage Time
Fall Time
IC = 2 A
IB1 = 0.4 A
IB2 = -0.8 A
tp = 30
µs
VCC = 150 V
(see figure 2)
2.5
0.2
0.5
3.0
0.3
µs
µs
µs
Ear
Repetitive Avalanche
Energy
L = 2 mH
C = 1.8 nF
VCC = 50 V
VBE = -5 V
(see figure 3)
6mJ
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area
Derating Curve
BUL1203EFP
2/7


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