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BUL1203EFP Datasheet(PDF) 1 Page - STMicroelectronics

Part No. BUL1203EFP
Description  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BUL1203EFP Datasheet(HTML) 1 Page - STMicroelectronics

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BUL1203EFP
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
HIGH VOLTAGE CAPABILITY
s
LOW SPREAD OF DYNAMIC PARAMETERS
s
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s
VERY HIGH SWITCHING SPEED
s
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
APPLICATIONS
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING (277 V HALF
BRIDGE AND 120 V PUSH-PULL
TOPOLOGIES)
DESCRIPTION
The BUL1203EFP is a new device manufactured
using Diffused Collector technology to enhance
switching speeds and tight hFE range while
maintaining a wide RBSOA.
Thanks to his structure it has an intrinsic
ruggedness which enables the transistor to
withstand a high collector current level during
Breakdown condition, without using the transil
protection usually necessary in typical converters
for lamp ballast.
®
INTERNAL SCHEMATIC DIAGRAM
November 2003
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCBO
Collector-BaseVoltage (IE = 0)
1200
V
VCES
Collector-Emitter Voltage (VBE = 0)
1200
V
VCEO
Collector-Emitter Voltage (IB = 0)
550
V
VEBO
Emitter-Base Voltage (IC = 0)
9
V
IC
Collector Current
5
A
ICM
Collector Peak Current (tp < 5 ms)
8
A
IB
Base Current
2
A
IBM
Base Peak Current (tp < 5 ms)
4
A
Ptot
Total Dissipation at Tc = 25
o C36
W
Visol
Insulation Withstand Voltage (RMS) from All
Three Leads to Exernal Heatsink
1500
V
Tstg
Storage Temperature
-65 to 150
oC
Tj
Max. Operating Junction Temperature
150
oC
1
2
3
TO-220FP
1/7


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