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BUL903EDFP Datasheet(PDF) 2 Page - STMicroelectronics

Part No. BUL903EDFP
Description  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BUL903EDFP Datasheet(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
3.57
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = 0)
VCE = 900 V
100
µA
IEBO
Emitter Cut-off
Current (IC = 0)
VEB = 7 V
100
µA
V(BR)CES
Collector-Emitter
Breakdown Voltage
(VBE = 0)
IC = 100
µA
900
V
VCEO(sus)
∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 10 mA
L = 25 mH
400
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 0.5 A
IB = 50 mA
IC = 1 A
IB = 0.15 A
IC = 2 A
IB = 0.4 A
0.5
1
1.5
V
V
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 0.5 A
IB = 50 mA
IC = 1 A
IB = 0.15 A
IC = 2 A
IB = 0.4 A
1
1.1
1.2
V
V
V
hFE
DC Current Gain
IC = 10 mA
VCE = 5 V
IC = 0.25 A
VCE = 5 V
IC = 0.5 A
VCE = 5 V
IC = 2.5 A
VCE = 5 V
20
40
28
8
70
60
16
td
tr
ts
tf
RESISTIVE LOAD
Delay Time
Rise Time
Storage Time
Fall Time
VCC = 125 V
IC = 0.7 A
IB1 = 50 mA
IB2 = 0.4 A
tp = 300
µs
(see figure 1)
0.2
1
0.8
0.25
µs
µs
µs
µs
Ear
Repetitive Avalanche
Energy
VCC = 50V
C = 1.8 nF
VBE = -5 V
L = 2 mH
(see figure 2)
6mJ
VF
Parallel Diode Forward
Voltage
IF = 2 A
1.2
V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
BUL903EDFP
2/7


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