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BUL903EDFP Datasheet(PDF) 1 Page - STMicroelectronics

Part No. BUL903EDFP
Description  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BUL903EDFP Datasheet(HTML) 1 Page - STMicroelectronics

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BUL903EDFP
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
INTEGRATED ANTISATURATION AND
PROTECTION NETWORK
s
INTEGRATED ANTIPARALLEL COLLECTOR
EMITTER DIODE
s
HIGH VOLTAGE CAPABILITY
s
LOW SPREAD OF DYNAMIC PARAMETERS
s
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s
VERY HIGH SWITCHING SPEED
s
ARCING TEST SELF PROTECTED
s
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
APPLICATIONS
s
FOUR LAMP ELECTRONIC BALLAST FOR
120 V MAINS IN PUSH-PULL
CONFIGURATION
DESCRIPTION
The BUL903EDFP is manufactured using high
voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
The device has been designed to operate without
baker clamp and transil protection. This enables
saving from 2 up to 10 components in the
application.
INTERNAL SCHEMATIC DIAGRAM
September 2003
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VBE = 0)
900
V
VCEO
Collector-Emitter Voltage (IB = 0)
400
V
VEBO
Emitter-Base Voltage (IC = 0)
7
V
IC
Collector Current
5
A
ICM
Collector Peak Current (tp <5 ms)
8
A
IB
Base Current
2
A
IBM
Base Peak Current (tp <5 ms)
4
A
Ptot
Total Dissipation at Tc = 25
oC35
W
Visol
Insulation Withstand Voltage (RMS) from All
Three Leads to Exernal Heatsink
1500
V
Tstg
Storage Temperature
-65 to 150
oC
Tj
Max. Operating Junction Temperature
150
oC
1
2
3
TO-220FP
®
1/7


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