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BUL118D Datasheet(PDF) 2 Page - STMicroelectronics

Part No. BUL118D
Description  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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BUL118D Datasheet(HTML) 2 Page - STMicroelectronics

   
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THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
2.08
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = 0)
VCE = 700 V
VCE = 700 V
TC = 125
oC
100
500
µA
µA
ICEO
Collector Cut-off
Current (IB = 0)
VCE = 400 V
250
µA
VEBO
Emitter-Base Voltage
(IC = 0)
IE = 10 mA
9
V
VCEO(sus)
Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 mA
400
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 0.5 A
IB = 0.1 A
IC = 1 A
IB = 0.2 A
IC = 2 A
IB = 0.4 A
0.5
1
1.5
V
V
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 0.5 A
IB = 0.1 A
IC = 1 A
IB = 0.2 A
IC = 2 A
IB = 0.4 A
1
1.2
1.3
V
V
V
hFE
DC Current Gain
IC = 10 mA
VCE = 5 V
IC = 0.5 A
VCE = 5 V
IC = 2 A
VCE = 5 V
10
10
8
50
tr
ts
tf
RESISTIVE LOAD
Rise Time
Storage Time
Fall Time
VCC = 125 V
IC = 1 A
IB1 = 0.2 A
IB2 = -0.2 A
tp = 20
µs
(see figure 2)
0.4
3.2
0.25
0.7
4.5
0.4
µs
µs
µs
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 1 A
IB1 = 0.2 A
VBE(off) = -5 V
L = 50 mH
Vclamp = 300 V
RBB = 0
(see figure 1)
0.8
0.16
µs
µs
Vf
Diode Forward Voltage
IF = 1 A
2.5
V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
BUL118D
2/7


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