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BUL38D Datasheet(PDF) 2 Page - STMicroelectronics

Part No. BUL38D
Description  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BUL38D Datasheet(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
1.56
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = 0)
VCE = 800 V
VCE = 800 V
Tc = 125
oC
100
500
µA
µA
ICEO
Collector Cut-off
Current (IB = 0)
VCE = 450 V
250
µA
VCEO(sus)
∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 mA
L = 25 mH
450
V
VEBO
Emitter-Base Voltage
(IC = 0)
IE = 10 mA
9
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 1 A
IB = 0.2 A
IC = 2 A
IB = 0.4 A
IC = 3 A
IB = 0.75 A
0.5
0.7
1.1
V
V
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 1 A
IB = 0.2 A
IC = 2 A
IB = 0.4 A
1.1
1.2
V
V
hFE
DC Current Gain
IC = 10 mA
VCE = 5 V
IC = 0.5 A
VCE = 5 V
IC = 2 A
VCE = 5 V
Group A
Group B
10
13
22
60
23
32
ts
tf
RESISTIVE LOAD
Storage Time
Fall Time
IC = 2.5 A
VCC = 150 V
IB1 = -IB2 = 0.5 A
tp = 30
µs
(see figure 2)
1.0
2.2
0.8
µs
µs
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 2 A
IB1 = 0.4 A
VBE(off) = -5 V
RBB = 0
VCL = 250 V
L = 200
µH
(see figure 1)
1
55
1.8
100
µs
ns
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 2 A
IB1 = 0.4 A
VBE(off) = -5 V
RBB = 0
VCL = 250 V
L = 200
µH
Tc = 125
oC
(see figure 1)
1.3
100
µs
ns
Vf
Diode Forward Voltage
IC = 2 A
1.5
V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
The product is pre-selected in DC current gain (Group A and Group B). STMicroelectronics reserves the right to ship either groups
according to production availability. Please contact your nearest STMicrolectronics sales office for delivery datails.
BUL38D
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