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BU941ZP Datasheet(PDF) 2 Page - STMicroelectronics

Part No. BU941ZP
Description  HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON TRANSISTORS
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BU941ZP Datasheet(HTML) 2 Page - STMicroelectronics

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BU941ZP BU941ZPFI
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Table 2: Absolute Maximum Ratings
Table 3: Thermal Data
Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified)
* Pulsed: Pulsed duration = 300
µs, duty cycle
≤ 1.5 %.
Symbol
Parameter
Value
Unit
BU941ZP
BU941ZPFI
Unit
VCEO
Collector-Emitter Voltage (IB= 0)
350
V
VEBO
Emitter-Base Voltage (IC= 0)
5V
IC
Collector Current
15
A
ICM
Collector Peak Current (tp < 5ms)
30
A
IB
Base Current
1A
IBM
Base Peak Current (tp < 5 ms)
5A
Ptot
Total Dissipation at TC = 25 oC
155
65
W
Visol
Insulation Withstand Voltage (RMS) from All Three Leads to
External Heatsink
2500
V
Tstg
Storage Temperature
-65 to 175
-65 to 175
°C
TJ
Max. Operating Junction Temperature
175
175
°C
TO-218
ISOWATT218
Unit
Rthj-case
Thermal Resistance Junction-Case
Max
0.97
2.3
oC/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICEO
Collector Cut-off Current
(IB = 0)
VCE = 300 V
VCE = 300 V
Tj = 125 oC
100
0.5
µA
mA
IEBO
Emitter Cut-off Current
(IC = 0 )
VEB = 5 V
20
mA
VCL*
Clamping Voltage
IC = 100 mA
350
500
V
VCE(sat)* Collector-Emitter
Saturation Voltage
IC = 8 A
IB =100 mA
IC = 10 A
IB = 250 mA
IC = 12 A
IB = 300 mA
1.8
1.8
2
V
V
V
VBE(sat)* Base-Emitter
Saturation Voltage
IC = 8 A
IB =100 mA
IC = 10 A
IB = 250 mA
IC = 12 A
IB = 300 mA
2.2
2.5
2.7
V
V
V
hFE*
DC Current Gain
IC = 5 A
VCE = 10 V
300
Functional Test
VCC = 24 V
L = 7 mH
(see fig. 12)
10
A
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
VCC = 12 V
L = 7 mH
VBE(off) = 0 V
RBE =47 W
VClamp = 300 V
IC = 7 A
IB = 70 mA
(see fig. 14)
15
0.5
µs
µs
VF
Diode Forward Voltage
IF = 10 V
2.5
V


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