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BU810 Datasheet(PDF) 2 Page - STMicroelectronics

Part No. BU810
Description  MEDIUM VOLTAGE NPN FAST-SWITCHING DARLINGTON TRANSISTOR
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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BU810 Datasheet(HTML) 2 Page - STMicroelectronics

   
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THERMAL DATA
Rthj-case
Thermal Resistance Junction-case
Max
1.66
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = 0)
VCE = 600 V
200
µA
ICEO
Collector Cut-off
Current (IB = 0)
VCE = 400 V
1
mA
IEBO
Emitter Cut-off
Current (IC = 0)
VEB = 5 V
150
mA
VCEO(sus)
∗ Collector-Emitter
Sustaining Voltage
IC = 0.1 A
400
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 2 A
IB = 20 mA
IC = 4 A
IB = 200 mA
IC = 7 A
IB = 0.7 A
2
2.5
3
V
V
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 2 A
IB = 20 mA
IC = 4 A
IB = 200 mA
2.2
3
V
V
VF
Diode Forward Voltage IF = 7 A
3
V
RESISTIVE SWITCHING TIMES
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ton
ts
tf
Turn-on Time
Storage Time
Fall Time
VClamp = 250V
IC = 2A
IB1 = 20mA
VBE(off) = -5 V
0.6
1.5
0.5
µs
µs
µs
INDUCTIVE SWITCHING TIMES
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ts
tf
Storage Time
Fall Time
VClamp = 250V
IC = 2A
IB1 = 20mA
VBE(off) = -5 V
L = 500
µH
1.5
0.4
µs
µs
ts
tf
Storage Time
Fall Time
VClamp = 250V
IC = 7A
IB1 = 0.7A
VBE(off) = -5 V
L = 500
µH
1.5
0.4
µs
µs
* Pulsed : Pulse duration = 300
µs, duty cycle = 2%
BU810
2/4


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