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2N6284 Datasheet(PDF) 4 Page - ON Semiconductor

Part No. 2N6284
Description  Darlington Complementary Silicon Power Transistors
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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2N6284 Datasheet(HTML) 4 Page - ON Semiconductor

   
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2N6283 2N6284 2N6286 2N6287
http://onsemi.com
4
ACTIVE−REGION SAFE OPERATING AREA
50
Figure 5. 2N6284, 2N6287
20
2.0
0.05
50
100
0.2
5.0
0.5
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
10
1.0
0.1
2.0
5.0
20
10
0.1 ms
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25°C
SINGLE PULSE
TJ = 200°C
dc
5.0 ms
1.0 ms
0.5 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e. the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk) <
200
_C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
10,000
1.0
Figure 6. Small−Signal Current Gain
f, FREQUENCY (kHz)
10
2.0
5.0 10
20
50 100
200
1000
500
100
5000
20
200
500
2000
1000
50
TJ = 25°C
VCE = 3.0 Vdc
IC = 10 A
1000
0.1
Figure 7. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
100
1.0
2.0
5.0
20
100
10
500
300
200
Cib
Cob
50
0.2
0.5
2N6284 (NPN)
2N6287 (PNP)
TJ = 25°C
700
2N6284 (NPN)
2N6287 (PNP)


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