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2N6052 Datasheet(PDF) 1 Page - ON Semiconductor

Part No. 2N6052
Description  Darlington Complementary Silicon Power Transistors
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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2N6052 Datasheet(HTML) 1 Page - ON Semiconductor

   
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Darlington Complementary
Silicon Power Transistors
. . . designed for general−purpose amplifier and low frequency
switching applications.
High DC Current Gain —
hFE = 3500 (Typ) @ IC = 5.0 Adc
Collector−Emitter Sustaining Voltage — @ 100 mA
VCEO(sus) = 80 Vdc (Min) — 2N6058
100 Vdc (Min) — 2N6052, 2N6059
Monolithic Construction with Built−In Base−Emitter Shunt Resistors
w These devices are available in Pb−free package(s). Specifications herein
apply to both standard and Pb−free devices. Please see our website at
www.onsemi.com for specific Pb−free orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
MAXIMUM RATINGS (1)
Rating
Symbol
2N6058
2N6052
2N6059
Unit
Collector−Emitter Voltage
VCEO
80
100
Vdc
Collector−Base Voltage
VCB
80
100
Vdc
Emitter−Base voltage
VEB
5.0
Vdc
Collector Current — Continuous
Peak
IC
12
20
Adc
Base Current
IB
0.2
Adc
Total Device Dissipation
@TC = 25_C
Derate above 25_C
PD
150
0.857
Watts
W/_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–65 to +200_C
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Rating
Unit
Thermal Resistance, Junction to Case
RθJC
1.17
_C/W
(1) Indicates JEDEC Registered Data.
160
0
0
25
50
75
100
125
150
200
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
120
100
140
175
80
40
20
60
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
t
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 3
1
Publication Order Number:
2N6052/D
2N6052
2N6058
2N6059
*ON Semiconductor Preferred Device
DARLINGTON
12 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80−100 VOLTS
150 WATTS
*
*
CASE 1−07
TO−204AA
(TO−3)
PNP
NPN


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