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BUL742A Datasheet(PDF) 2 Page - STMicroelectronics

Part No. BUL742A
Description  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BUL742A Datasheet(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
1.78
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = 0)
VCE = 950 V
100
µA
ICEO
Collector Cut-off
Current (IB = 0)
VCE = 400 V
250
µA
VCEO(sus)
∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 10 mA
L = 25 mH
400
V
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 1 mA
12
24
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 1 A
IB = 0.2 A
IC = 3.5 A
IB = 1 A
0.5
1.5
V
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 3.5 A
IB = 1 A
1.5
V
hFE
DC Current Gain
IC = 800 mA
VCE = 3 V
IC = 10 mA
VCE = 5 V
16
10
40
ts
tf
RESISTIVE LOAD
Storage Time
Fall Time
VCC = 250 V
IC = 2.5 A
IB1 = 0.5 A
IB2 = -1 A
tp = 30
µs
(see figure 2)
0.9
100
µs
ns
Esb
Avalanche Energy
L = 2 mH
(see figure 1)
6
mJ
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Areas
Derating Curve
BUL742A
2/5


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