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BUL742A Datasheet(PDF) 1 Page - STMicroelectronics

Part No. BUL742A
Description  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BUL742A Datasheet(HTML) 1 Page - STMicroelectronics

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BUL742A
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
HIGH VOLTAGE CAPABILITY
s
LOW SPREAD OF DYNAMIC PARAMETERS
s
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s
VERY HIGH SWITCHING SPEED
APPLICATIONS
s
FOUR LAMP ELECTRONIC BALLAST FOR:
120 V MAINS IN PUSH-PULL
CONFIGURATION;
277 V MAINS IN HALF BRIDGE CURRENT
FEED CONFIGURATION.
s
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BUL742A is manufactured using high voltage
Multi
Epitaxial
Planar
technology
for
high
switching speeds and high voltage capability.
Thanks to an increased intermediate layer, it has
an
intrinsic
ruggedness
which
enables
the
transistor to withstand an high collector current
level during breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast.
®
INTERNAL SCHEMATIC DIAGRAM
October 2003
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VBE = 0)
950
V
VCEO
Collector-Emitter Voltage (IB = 0)
400
V
VEBO
Emitter-Base Voltage
(IC = 0,
IB
≤ 2 A, tp < 10µs, Tj < 150oC)
V(BR)EBO
V
IC
Collector Current
4
A
ICM
Collector Peak Current (tp <5 ms)
8
A
IB
Base Current
2
A
IBM
Base Peak Current (tp <5 ms)
4
A
Ptot
Total Dissipation at Tc = 25
oC70
W
Tstg
Storage Temperature
-65 to 150
oC
Tj
Max. Operating Junction Temperature
150
oC
1
2
3
TO-220
1/5


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