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BUL705 Datasheet(PDF) 4 Page - STMicroelectronics

Part No. BUL705
Description  High voltage fast-switching NPN Power Transistor
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BUL705 Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
BUL705
4/11
2
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Note (1) Pulsed duration = 300
µs, duty cycle ≤1.5%
Table 3.
Electrical characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICES
Collector cut-off current
(VBE =-1.5V)
VCE =700V
VCE =700V
Tj =125°C
100
500
µA
µA
ICEO
Collector cut-off current
(IB =0)
VCE =400V
250
µA
VEBO
Emitter-base voltage
(IC = 0)
IE =10mA
10
V
VCEO(sus) (1)
Collector-emitter
sustaining voltage
(IB = 0)
IC =100mA
L =25mH
400
V
VCE(sat) (1) Collector-emitter
saturation voltage
IC =2A
IB =0.4A
IC =3A
IB =0.6A
IC =4A
IB =1A
0.4
0.6
0.8
V
V
V
VBE(sat) (1)
Base-emitter saturation
voltage
IC =2A
IB =0.4A
IC =3A
IB =0.6A
1.1
1.2
V
V
hFE
DC current gain
IC =10mA
VCE =5V
IC =2A
VCE =5V
10
16
32
ts
Resistive load
Storage time
VCC =250V
IC =2A
IB1 = -IB2 =0.4A
(see fig.12 )
2.4
3.5
µs
ts
tf
Inductive load
Storage time
Fall time
IC =2A
IB1 =0.4A
VBE(off) =-5V
RBB =0
Vclamp=250V
L =200
µH
(see fig.13)
0.7
50
1.4
100
µs
ns
ts
tf
Inductive load
Storage time
Fall time
IC =2A
IB1 =0.4A
VBE(off) =-5V
RBB =0
Vclamp=250V
L =200
µH
Tj =125°C
(see fig.13)
1
75
µs
ns


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