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BUL416 Datasheet(PDF) 2 Page - STMicroelectronics

Part No. BUL416
Description  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BUL416 Datasheet(HTML) 2 Page - STMicroelectronics

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Table 3: Thermal Data
Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified)
* Pulsed: Pulsed duration = 300 ms, duty cycle
≤ 1.5 %.
# Note: Product is pre-selected in DC current gain (Group A and Group B). STMicroelectronics reserves the right to ship either groups ac-
cording to production availability. Please contact your nearest STMicrolectronics sales office for delivery datails.
TJ
Max. Operating Junction Temperature
150
°C
Symbol
Parameter
Value
Unit
Rthj-case
Rthj-amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
1.14
62.5
oC/W
oC/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off Current
(VBE =0 V)
VCE = 1600 V
VCE = 1600 V
Tj = 125 oC
100
500
µA
µA
ICEO
Collector Cut-off Current
(IB = 0)
VCE = 800 V
250
µA
VCEO(sus)* Collector-Emitter
Sustaining Voltage
(IB = 0 )
IC = 100 mA
L = 25 mH
800
V
VEBO
Emitter-Base Voltage
(IC = 0 )
IE = 10 mA
9
V
VCE(sat)* Collector-Emitter
Saturation Voltage
IC = 2 A
IB = 0.4 A
IC = 4 A
IB = 1.33 A
1.5
3
V
V
VBE(sat)* Base-Emitter Saturation
Voltage
IC = 2 A
IB = 0.4 A
IC = 4 A
IB = 1.33 A
1.2
1.5
V
V
hFE*
DC Current Gain
IC = 10 mA
VCE = 5 V
IC = 0.7 A
VCE = 5 V
Group A
Group B
10
12
25
27
40
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 3 A
IB1 = 1 A
VBE(off) = -5 V
RBB = 0 W
Vclamp = 200 V
L = 200 µH
(see figure 12)
2.3
650
µs
ns
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 3 A
IB1 = 1 A
VBE(off) = -5 V
RBB = 0 W
Vclamp = 200 V
L = 200 µH
Tj = 100 oC
(see figure 12)
3
680
µs
ns


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