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BUL138FP Datasheet(PDF) 2 Page - STMicroelectronics

Part No. BUL138FP
Description  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BUL138FP Datasheet(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
3.8
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = 0)
VCE = 800 V
VCE = 800 V
Tj = 125
oC
100
500
µA
µA
ICEO
Collector Cut-off
Current (IB = 0)
VCE = 400 V
250
µA
VCEO(sus)
∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 mA
L = 25 mH
400
V
VEBO
Emitter-Base Voltage
IE = 10 mA
9
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 1 A
IB = 0.2 A
IC = 2 A
IB = 0.4 A
IC = 3 A
IB = 0.6 A
IC = 4 A
IB = 1 A
IC = 5 A
IB = 1 A
0.7
0.5
0.7
1
1
V
V
V
V
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 1 A
IB = 0.2 A
IC = 2 A
IB = 0.4 A
IC = 3 A
IB = 0.6 A
1.1
1.3
1.5
V
V
V
hFE
DC Current Gain
IC = 2 A
VCE = 5 V
IC = 10 mA
VCE = 5 V
8
10
40
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 2 A
IB1 = 0.4 A
VBE(off) = -5 V
RBB = 0
VCL = 250 V
L = 200
µH
0.7
50
1.4
100
µs
ns
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 2 A
IB1 = 0.4 A
VBE(off) = -5V
RBB = 0
VCL = 250 V
L = 200
µH
Tj = 125
oC
1
75
µs
ns
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Areas
Derating Curve
BUL138FP
2/6


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