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2N5194 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. 2N5194
Description  Silicon PNP Power Transistors
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2N5194 Datasheet(HTML) 2 Page - ON Semiconductor

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2N5194, 2N5195
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 0.1 Adc, IB = 0)
2N5194
2N5195
VCEO(sus)
60
80
Vdc
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
2N5194
(VCE = 80 Vdc, IB = 0)
2N5195
ICEO
1.0
1.0
mAdc
Collector Cutoff Current
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)
2N5194
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)
2N5195
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)
2N5194
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)
2N5195
ICEX
0.1
0.1
2.0
2.0
mAdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
2N5194
(VCB = 80 Vdc, IE = 0)
2N5195
ICBO
0.1
0.1
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
1.0
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 1.5 Adc, VCE = 2.0 Vdc)
2N5194
2N5195
(IC = 4.0 Adc, VCE = 2.0 Vdc)
2N5194
2N5195
hFE
25
20
10
7.0
100
80
Collector−Emitter Saturation Voltage (Note 3)
(IC = 1.5 Adc, IB = 0.15 Adc)
(IC = 4.0 Adc, IB = 1.0 Adc)
VCE(sat)
0.6
1.4
Vdc
Base−Emitter On Voltage (Note 3)
(IC = 1.5 Adc, VCE = 2.0 Vdc)
VBE(on)
1.2
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT
2.0
MHz
2. Indicates JEDEC registered data.
3. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
10
0.1
0.004
7.0
5.0
1.0
0.7
0.5
0.3
0.007 0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1.0
4.0
VCE = 2.0 V
VCE = 10 V
2.0
3.0
TJ = 150°C
−55 °C
25°C
3.0
2.0
0.2


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