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2N5194 Datasheet(PDF) 5 Page - ON Semiconductor

Part No. 2N5194
Description  Silicon PNP Power Transistors
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2N5194 Datasheet(HTML) 5 Page - ON Semiconductor

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2N5194, 2N5195
http://onsemi.com
5
Figure 12. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03 0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20
30
50
100
200 300
1000
500
qJC(max) = 3.12°C/W
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA
tP
PP
PP
t1
1/f
DUTY CYCLE, D = t1 f =
t1
tP
PEAK PULSE POWER = PP
Figure 13.
A train of periodical power pulses can be represented by
the model shown in Figure 13. Using the model and the
device thermal response, the normalized effective transient
thermal resistance of Figure 12 was calculated for various
duty cycles.
To find
qJC(t), multiply the value obtained from Figure 12
by the steady state value
qJC.
Example:
The 2N5193 is dissipating 50 watts under the following
conditions: t1 = 0.1 ms, tp = 0.5 ms. (D = 0.2).
Using Figure 12, at a pulse width of 0.1 ms and D = 0.2,
the reading of r(t1, D) is 0.27.
The peak rise in junction temperature is therefore:
DT = r(t) x PP x qJC = 0.27 x 50 x 3.12 = 42.2_C


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