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2N3771 Datasheet(PDF) 4 Page - ON Semiconductor

Part No. 2N3771
Description  High Power NPN Silicon Power Transistors
Download  5 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2N3771 Datasheet(HTML) 4 Page - ON Semiconductor

  2N3771_06 Datasheet HTML 1Page - ON Semiconductor 2N3771_06 Datasheet HTML 2Page - ON Semiconductor 2N3771_06 Datasheet HTML 3Page - ON Semiconductor 2N3771_06 Datasheet HTML 4Page - ON Semiconductor 2N3771_06 Datasheet HTML 5Page - ON Semiconductor  
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2N3771, 2N3772
http://onsemi.com
4
Figure 4. Switching Time Test Circuit
+11 V
25
ms
0
−9.0 V
RB
−4 V
D1
SCOPE
VCC
+30 V
RC
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
51
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
RB AND RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS
10
0.3
Figure 5. Turn−On Time
IC, COLLECTOR CURRENT (AMP)
5.0
2.0
1.0
0.5
0.2
0.1
0.01
0.5 0.7 1.0
2.0
5.0 7.0
30
VCC = 30
IC/IB = 10
TJ = 25°C
0.05
td
tr
3.0
0.02
10
20
VBE(off) = 5.0 V
100
0.3
Figure 6. Turn−Off Time
IC, COLLECTOR CURRENT (AMP)
50
20
10
5.0
2.0
1.0
0.1
0.5
1.0
2.0
5.0 7.0
30
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
0.5
tf
ts
3.0
0.2
10
20
2000
0.1
Figure 7. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
200
0.2
1.0
2.0
5.0
100
Cib
10
20
1000
700
500
300
0.5
50
Cob
TJ = 25°C
500
0.3
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
5.0
0.5 0.7
1.0
2.0
3.0
5.0
10
20
30
100
50
20
200
TJ = 150°C
25
°C
−55
°C
7.0
300
70
30
10
7.0
VCE = 4.0 V
Figure 9. Collector Saturation Region
2.0
0.01
IC, COLLECTOR CURRENT (AMP)
0
0.02
0.1
0.2
0.5
1.0
2.0
5.0
10
1.6
1.2
0.8
0.4
IC = 2.0 A
TJ = 25°C
0.05
5.0 A
10 A
20 A


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