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2N3771 Datasheet(PDF) 3 Page - ON Semiconductor

Part No. 2N3771
Description  High Power NPN Silicon Power Transistors
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2N3771 Datasheet(HTML) 3 Page - ON Semiconductor

  2N3771_06 Datasheet HTML 1Page - ON Semiconductor 2N3771_06 Datasheet HTML 2Page - ON Semiconductor 2N3771_06 Datasheet HTML 3Page - ON Semiconductor 2N3771_06 Datasheet HTML 4Page - ON Semiconductor 2N3771_06 Datasheet HTML 5Page - ON Semiconductor  
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2N3771, 2N3772
http://onsemi.com
3
200
0
0
25
50
75
100
125
150
175
200
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
150
100
50
25
175
125
75
Figure 2. Thermal Response — 2N3771, 2N3772
t, TIME (ms)
1.0
0.01
0.02
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
2000
qJC(t) = r(t) qJC
qJC = 0.875°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.01
SINGLE PULSE
0.1
0.02
1000
40
1.0
Figure 3. Active−Region Safe Operating Area
— 2N3771, 2N3772
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
30
20
10
2.0
2.0
3.0
5.0
10
30
50
70 100
7.0
dc
5.0
7.0
3.0
100
ms
1.0 ms
20
2N3771
2N3772, (dc)
40
ms
100 ms
500 ms
PULSE CURVES APPLY
FOR ALL DEVICES
2N3771
2N3772
200
ms
BONDING WIRE LIMITED
THERMALLY LIMITED
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
TC = 25°C
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation: i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
Figure 3 is based on JEDEC registered Data. Second
breakdown pulse limits are valid for duty cycles to 10%
provided TJ(pk) < 200_C. TJ(pk) may be calculated from the
data of Figure 2. Using data of Figure 2 and the pulse power
limits of Figure 3, TJ(pk) will be found to be less than TJ(max)
for pulse widths of 1 ms and less. When using ON
Semiconductor transistors, it is permissible to increase the
pulse power limits until limited by TJ(max).


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