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2N3771 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. 2N3771
Description  High Power NPN Silicon Power Transistors
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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2N3771 Datasheet(HTML) 2 Page - ON Semiconductor

   
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2N3771, 2N3772
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2 and 3)
2N3771
(IC = 0.2 Adc, IB = 0)
2N3772
VCEO(sus)
40
60
Vdc
Collector−Emitter Sustaining Voltage
2N3771
(IC = 0.2 Adc, VEB(off) = 1.5 Vdc, RBE = 100 W)
2N3772
VCEX(sus)
50
80
Vdc
Collector−Emitter Sustaining Voltage
2N3771
(IC = 0.2 Adc, RBE = 100 W)
2N3772
VCER(sus)
45
70
Vdc
Collector Cutoff Current (Note 2)
(VCE = 30 Vdc, IB = 0)
2N3771
(VCE = 50 Vdc, IB = 0)
2N3772
(VCE = 25 Vdc, IB = 0)
ICEO
10
10
mAdc
Collector Cutoff Current (Note 2)
(VCE = 50 Vdc, VEB(off) = 1.5 Vdc)
2N3771
(VCE = 100 Vdc, VEB(off) = 1.5 Vdc)
2N3772
(VCE = 45 Vdc, VEB(off) = 1.5 Vdc)
2N6257
(VCE = 30 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
2N3771
2N3772
(VCE = 45 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
ICEV
2.0
5.0
4.0
10
10
mAdc
Collector Cutoff Current (Note 2)
(VCB = 50 Vdc, IE = 0)
2N3771
(VCB = 100 Vdc, IE = 0)
2N3772
ICBO
2.0
5.0
mAdc
Emitter Cutoff Current (Note 2)
(VBE = 5.0 Vdc, IC = 0)
2N3771
(VBE = 7.0 Vdc, IC = 0)
2N3772
IEBO
5.0
5.0
mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain (Note 3)
(IC = 15 Adc, VCE = 4.0 Vdc)
2N3771
(IC = 10 Adc, VCE = 4.0 Vdc)
2N3772
(IC = 8.0 Adc, VCE = 4.0 Vdc)
(IC = 30 Adc, VCE = 4.0 Vdc)
2N3771
(IC = 20 Adc, VCE = 4.0 Vdc)
2N3772
hFE
15
15
5.0
5.0
60
60
Collector−Emitter Saturation Voltage
(IC = 15 Adc, IB = 1.5 Adc)
2N3771
(IC = 10 Adc, IB = 1.0 Adc)
2N3772
(IC = 30 Adc, IB = 6.0 Adc)
2N3771
(IC = 20 Adc, IB = 4.0 Adc)
2N3772
VCE(sat)
2.0
1.4
4.0
4.0
Vdc
Base−Emitter On Voltage
(IC = 15 Adc, VCE = 4.0 Vdc)
2N3771
(IC = 10 Adc, VCE = 4.0 Vdc)
2N3772
(IC = 8.0 Adc, VCE = 4.0 Vdc)
VBE(on)
2.7
2.2
Vdc
*DYNAMIC CHARACTERISTICS (Note 2)
Current−Gain — Bandwidth Product
(IC = 1.0 Adc, VCE = 4.0 Vdc, ftest = 50 kHz)
fT
0.2
MHz
Small−Signal Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
hfe
40
SECOND BREAKDOWN
Second Breakdown Energy with Base Forward Biased, t = 1.0 s (non−repetitive)
(VCE = 40 Vdc)
2N3771
(VCE = 60 Vdc)
2N3772
IS/b
3.75
2.5
Adc
2. Indicates JEDEC registered data.
3. Pulse Test: 300
ms, Rep. Rate 60 cps.


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