Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

2N3771 Datasheet(PDF) 1 Page - ON Semiconductor

Part No. 2N3771
Description  High Power NPN Silicon Power Transistors
Download  5 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
Logo 

2N3771 Datasheet(HTML) 1 Page - ON Semiconductor

   
Zoom Inzoom in Zoom Outzoom out
 1 / 5 page
background image
© Semiconductor Components Industries, LLC, 2006
October, 2006 − Rev. 11
1
Publication Order Number:
2N3771/D
2N3771, 2N3772
2N3771 is a Preferred Device
High Power NPN Silicon
Power Transistors
These devices are designed for linear amplifiers, series pass
regulators, and inductive switching applications.
Features
Forward Biased Second Breakdown Current Capability
IS/b = 3.75 Adc @ VCE = 40 Vdc − 2N3771
= 2.5 Adc @ VCE = 60 Vdc − 2N3772
Pb−Free Packages are Available*
MAXIMUM RATINGS (Note 1)
Rating
Symbol
2N3771
2N3772
Unit
Collector−Emitter Voltage
VCEO
40
60
Vdc
Collector−Emitter Voltage
VCEX
50
80
Vdc
Collector−Base Voltage
VCB
50
100
Vdc
Emitter−Base Voltage
VEB
5.0
7.0
Vdc
Collector Current − Continuous
Peak
IC
30
30
20
30
Adc
Base Current −
Continuous
Peak
IB
7.5
15
5.0
15
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
150
0.855
W
W/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Case
qJC
1.17
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC registered data.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
Preferred devices are recommended choices for future use
and best overall value.
20 and 30 AMPERE
POWER TRANSISTORS
NPN SILICON
40 and 60 VOLTS, 150 WATTS
MARKING
DIAGRAM
TO−204AA (TO−3)
CASE 1−07
STYLE 1
2N377x
= Device Code
x = 1 or 2
G
= Pb−Free Package
A
= Assembly Location
YY
= Year
WW
= Work Week
MEX
= Country of Origin
2N377xG
AYYWW
MEX
2N3772
TO−204
100 Units / Tray
2N3772G
TO−204
(Pb−Free)
100 Units / Tray
Device
Package
Shipping
2N3771
TO−204
100 Units / Tray
2N3771G
TO−204
(Pb−Free)
100 Units / Tray
ORDERING INFORMATION


Html Pages

1  2  3  4  5 


Datasheet Download




Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Alldatasheet API   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn