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STB300NH02L Datasheet(PDF) 4 Page - STMicroelectronics |
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STB300NH02L Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 14 page Electrical characteristics STB300NH02L - STP300NH02L 4/14 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1mA, VGS= 0 24 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 20V, VDS = 20V, Tc=125°C 1 10 µA µA IGSS Gate body leakage current (VDS = 0) VDS = ±20V ±100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 12 V RDS(on) Static drain-source on resistance VGS= 10V, ID= 80A TO-220 D²PAK 1.8 1.4 2.2 1.8 m Ω m Ω RDS(on) Static drain-source on resistance VGS= 10V, ID= 80A @100°C TO-220 D²PAK 2.7 2.1 m Ω m Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 15V, f = 1 MHz, VGS =0 7055 3251 307 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD= 12V,ID= 120A, VGS= 10V (see Figure 13) 109.4 30.2 26.4 nC nC nC RG Gate input resistance f=1 MHz Gate DC Bias = 0 Test signal level = 20mV open drain 4.4 Ω |
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