BD533_03 datasheet(2/4 Pages) STMICROELECTRONICS

Part #	BD533

Description	COMPLEMENTARY SILICON POWER TRANSISTORS

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

2.5

70

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

for BD533/534

VCB = 45 V

for BD535/536

VCB = 60 V

for BD537/538

VCB = 80 V

100

µA

ICES

Collector Cut-off

Current (VBE = 0)

for BD533/534

VCE = 45 V

for BD535/536

VCE = 60 V

for BD537/538

VCE = 80 V

100

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

1

mA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 100 mA

for BD533/534

for BD535/536

for BD537/538

45

60

80

V

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 2 A

IB = 0.2 A

IC = 6 A

IB = 0.6 A

0.8

V

VBE

∗

Base-Emitter Voltage

IC = 2 A

VCE = 2 V

1.5

V

hFE

∗

DC Current Gain

IC = 10 mA

VCE = 5 V

for BD533/534

for BD535/536

for BD537/538

IC = 500 mA

VCE = 2 V

IC = 2 A

VCE = 2 V

for BD533/534

for BD535/536

for BD537/538

20

15

40

25

15

fT

Transition frequency

IC = 500 mA

VCE = 1 V

3

12

MHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

For PNP types voltage and current values are negative.

BD533 BD534 BD535 DB536 BD537 BD538

2/4

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